High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors
نویسندگان
چکیده
منابع مشابه
Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors
In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2017
ISSN: 2162-8769,2162-8777
DOI: 10.1149/2.0041711jss